Memorija

DDR3L PC3-12800 &bull, CL=11 &bull, Unbuffered &bull, NON-ECC &bull, DDR3-1600 &bull, 1.35V &bull, 1024Meg x 64 Pomagajte si &scaron,e z drugim enakim RAMOM. DDR3 PC3-12800 &bull, CL=11 &bull, Unbuffered &bull, NON-ECC &bull, DDR3-1600 &bull, 1.35V

Lenovo 8GB DDR4-3200 SODIMM memory for notebooks Zanesljiva nadgradnja for vaš Lenovo notebook: 8GB DDR4-3200 SODIMM. Uživajte into bolj tekočem večopravilnem part, hitrejšem zagonu aplikacij and bolj odzivnem systemu with enostavno namestitvijo. K

Features Memory clock speed: 3200 MHz Memory form factor: 288-pin DIMM ECC: No Memory channels: Single-channel Memory layout (modules x size): 1 x 8 GB Buffered memory type: Unregistered (unbuffered) CAS latency: 16 Component for: PC/Server Internal

Features Component for: PC Internal memory type: DDR4 Certification: CE Memory form factor: 288-pin DIMM RoHS compliance: Y Memory clock speed: 3200 MHz Internal memory: 8 GB Buffered memory type: Unregistered (unbuffered) Memory layout (modules x si

Features Internal memory type: DDR4 Certification: CE Memory form factor: 288-pin DIMM Component for: PC Memory clock speed: 3200 MHz JEDEC standard: Yes Internal memory: 8 GB Memory layout (modules x size): 1 x 16 GB Buffered memory type: Unregister

Features Internal memory type: DDR4 Certification: CE Memory form factor: 288-pin DIMM Component for: PC Memory layout (modules x size): 1 x 8 GB Memory clock speed: 2666 MHz Internal memory: 8 GB Memory voltage: 1.2 V Buffered memory type: Unregiste

Model name F3-1600C9D-8GAB Series Ares Capacity 8 GB (2 x 4096 MB) Module amount 2 pieces Design DIMM Type DDR3 Connection 240-Pin Voltage 1.5 Voltage Standard DDR3-1600 (PC3-12800) Timings CAS latency (CL) 9 RAS-to-CAS delay (tRCD) 9 RAS-Precharge

Features Memory clock speed: 3200 MHz Memory channels: Single-channel Memory voltage: 1.35 V Component for: PC Internal memory type: DDR4 Memory layout (modules x size): 1 x 8 GB Memory form factor: UDIMM Internal memory: 8 GB CAS latency: 16 Safety

Features Component for: PC/Server Memory form factor: 260-pin SO-DIMM Memory voltage: 1.2 V Memory clock speed: 2666 MHz ECC: No Internal memory type: DDR4 CAS latency: 19 Buffered memory type: Unregistered (unbuffered) Memory layout (modules x size)

Features Certification: RoHS Internal memory type: DDR3 ECC: No Memory layout (modules x size): 2 x 8 GB Internal memory: 16 GB Memory voltage: 1.5 V Memory clock speed: 1600 MHz Memory form factor: 240-pin DIMM Logistics data Harmonized System (HS)

Tehnične lastnosti - DDR4 SODIMM pomnilnik - Kapaciteta: 8GB - Hitrost: 3200 MT/s - Standard: JEDEC - Zakasnitev: CL19 - Napetost: 1,2V - Dimenzije: 69,6 x 30 mm - Primeren za prenosne in kompaktne računalnike DDR4 SODIMM pomnilnik s kapaciteto 8G

Hitrost in zanesljivost Pomnilniki AEGIS simbolizirajo moč. Nudijo vrhunsko stabilnost pri delovanju gaming sistemov. Kompatibilni so z vrsto sistemov in so podvrženi striktnim G.SKILL standardom kvalitete. Optimiziran za Intel Core Pomnilnik je